Program

    1. Materials growth and processing
      1. Growth of advanced semiconductor materials for microelectronics, photovoltaics and photonics
        • Bulk, layered structures, films, nano- and quantum structures
        • Si with advanced properties, strained structures
        • SOI, Ge, SiGe, SiC, GaN, Ga2O3, AlN, GaAs, Perovskites, compound III-V and II-VI semiconductors etc.
        • Functional oxides and magnetically active materials (ZnO, TiO2, CuCrO2, materials for spintronics, etc.)
        • Integration of alternative semiconductors into Si-based electronics
        • …
      2. Material processing
        • Wafer design and substrate engineering
        • Cleaning, etching and wafer separation, etc.
        • Process development and characterization
        • Environmental and sustainability aspects, recycling
        • …
      3. Modelling and simulation of material growth, synthesis and integration

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    1. Properties of defects and defect engineering
      1. Intrinsic and extrinsic point defects, extended defects and interfaces
        • Impurities and doping (hydrogen and dopants in Si, transition metals and rare-earth elements in WBG semiconductors and oxides)
        • Space based applications (PV and electronic devices)
        • Low dimensional defects for quantum computing, sensing and communication
        • …
      2. Defects related degradation and reliability issues
        • Light-induced degradation
        • Potential-induced degradation
        • Device reliability
        • …
      3. Defect engineering, gettering and passivation; stress-, channel- and impurity-engineering; special aspects of defect formation in nanostructures
      4. Modelling and simulation of defects and their interactions
        • Ab-initio calculations
        • Defect kinetics
        • …

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    1. Devices and characterization
      1. Role of defects in determining the functional properties of devices
        • Influence of defects on structural, electrical and thermal properties of devices
        • Defect issues for next generation micro- and nano-electronic devices, power electronics, solar cells, thermoelectric devices, (III-V/Si) photonics, etc.
        • Defects issues for reliability and processing of nitride and oxide devices for power and RF applications
        • Nanostructured materials: devices and functionalization, nanowires, nano-transistors
        • …
      2. Advanced and novel methods for defect characterization in materials and devices
        • “In-situ”/“in-operando” methods for defect studies and characterization, advanced characterization of defects in devices
        • Characterization of nanostructures and nano-devices
        • …
      3. Defect modelling and simulation for device performance

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    1. General issues
      1. New applications for semiconductor materials: semiconductors as electrode materials for batteries
      2. Beyond silicon
      3. Quantum technology
      4. …

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Invited Speakers

Prof. Mariana Bertoni (Arizona State University)
Prof. José Coutinho (University of Aveiro)
Dr. Kaspars Dadzis (Leibniz-Institut für Kristallzüchtung IKZ)
Dr. Stefan Eichler (Freiberger Compound Materials)
Dr. Marianne Etzelmüller Bathen (University of Oslo)
Prof. Joachim Knoch (RWTH Aachen)
Dr. Dirk König (Australian National University ANU)
Prof. Martin Kuball (University of Bristol)
Dr. Shao Qi Lim (University of Melbourne)
Prof. Bart Macco (Eindhoven University of Technology TU/e)
Prof. Enrico Napolitani (University of Padua)
Dr. Michele Perego (CNR National Research Council of Italy)
Hon. Prof. Dr. sc. techn. et Dr. Ing. Hans Richter (CEO GFWW – e. V.)
Prof. Jörg Schulze (Friedrich-Alexander-University FAU, Fraunhofer IISB Erlangen)
Dr. Michael Trupke (Austrian Academy of Sciences ÖAW)
Prof. Jonathan Veinot (University of Alberta)
Dr. Laetitia Vincent (Centre for Nanoscience and Technology CNRS)
Dr. Koji Yokoyama (Science and Technology Facilities Council STFC)

Booklet of the Abstracts

The Booklet of the Abtracts can be found here. The needed password was in the “Welcome to GADEST 2024” mail from 23th August 2024.

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